Part Number: 912669-4 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc | NSN: 5962-01-083-2249 (5962010832249) | |
Alternate P/N : 9126694 | Item Name : microcircuit memory | CAGE Code: 80249 | FSC : 5962 Microcircuits Electronic |
We currently have Part Number 912669-4 with NSN 5962010832249 in stock. This component is manufactured by Bae Systems Information And Electronic Systems Integration Inc under CAGE Code 80249 and described as Microcircuit Memory..
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A national stock number, also known as an NSN, part bears an official label indicating its procurement, storage, and stocking within the Federal supply system. NSN parts are an essential part of the military and defense logistics supply chain and can have multiple part numbers under it depending on whether it has multiple manufacturers for the same part. Part number 912669-4 belongs to the Federal Supply Group 5962 Microcircuits Electronic.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-083-2249 Item Description: Microcircuit Memory | 5962 | 010832249 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | U | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
912669-4 | C | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 205 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE0 0 TO 70 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONWSD GROUND MOBILE FORCE SATELLITE COMM TERM ANTSC-93A SPRUANCE CLASS DD 963 VIRGINIA CLASS CGN 41 LANDING CRAFT AIR CUSHION LCAC RADAR SET LIGHTWEIGHT ED ANTPS-59 LOS ANGELES CLASS SSN 688 OVER THE HORIZON BACK SCANNER |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND STATIC OPERATION AND PROGRAMMABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN38 INPUT |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | FEAT | SPECIAL FEATURESWEAPON SYSTEM ESSENTIAL |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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