Buy Part 202104-007 of Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-262-2185 - Quote Now!

Part Number: 202104-007 Manufacturer: Bae Systems Information And Electronic Systems Integration I NSN: 5962-01-262-2185 (5962012622185)
Alternate P/N :  202104007 Item Name : microcircuit memory CAGE Code: 81413 FSC : 5962 Microcircuits Electronic

We currently have Part Number 202104-007 with NSN 5962012622185 in stock. This component is manufactured by Bae Systems Information And Electronic Systems Integration I under CAGE Code 81413 and described as Microcircuit Memory..

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With over 100 million parts sold, we are among the reputed independent distributors within the United States. Sourcingstreamlined.com has over 26 different distinct federal supply code categories, with more than 10 million national stock numbers from 5,000 leading manufacturers.

A national stock number, also known as an NSN, part bears an official label indicating its procurement, storage, and stocking within the Federal supply system. NSN parts are an essential part of the military and defense logistics supply chain and can have multiple part numbers under it depending on whether it has multiple manufacturers for the same part. Part number 202104-007 belongs to the Federal Supply Group 5962 Microcircuits Electronic.

NSN Information for Part Number 202104-007 with NSN 5962-01-262-2185, 5962012622185

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-262-2185

Item Description:

Microcircuit Memory

59620126221850ND
CIICHCCESDPMICCriticalityENAC
UDA0
Part NumberISCRNVCRNCCHCCMSDSSADC
202104-00718E

Characteristics Data of NSN 5962-01-262-2185, 5962012622185

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 840 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING794 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN10 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEPROM
MEMORYCZZZMEMORY CAPACITYUNKNOWN
MEMORYTESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORYTTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
MEMORYZZZKSPECIFICATIONSTANDARD DATA81349-MIL-M-38510204 GOVERNMENT SPECIFICATION

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