We currently have Part Number S3304 with NSN 5962-01-094-4003 in stock. This component is manufactured by Bae Systems Information And Electronic Systems Integration Inc under CAGE Code 80249 and described as Microcircuit Memory.
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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor's Terms & Conditions available athttps://www.asapsemi.com/customer-terms-and-conditions/. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.
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A national stock number, also known as an NSN, part bears an official label indicating its procurement, storage, and stocking within the Federal supply system. NSN parts are an essential part of the military and defense logistics supply chain and can have multiple part numbers under it depending on whether it has multiple manufacturers for the same part. Part number S3304 belongs to the Federal Supply Group [FSC].
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-094-4003 Item Description: Microcircuit Memory | 5962 | 010944003 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
S3304 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND SCHOTTKY AND BIPOLAR AND PROGRAMMED AND WENABLE AND MONOLITHIC |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC130 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT AND 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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